, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. tic206 series silicon triacs sensitive gate triacs 4 a rms glass passivated wafer 400 v to 800 v off-state voltage max igt of 5 ma (quadrants 1-3) to-220 pa (topv mt-i c mt2c fic ckage ew) 1 2 3 o pin 2 is in electrical contact with the mounting base absolute maximum ratings over operating case temperature (unless otherwise noted) rating repetitive peak off-state voltage (see note 1 ) TIC206D tic206m tic206s tic206n full-cycle rms on-state current at (or below) 85c case temperature (see note 2) peak on-state surge current full-sine-wave (see note 3) peak on-state surge current half-sine-wave (see note 4) peak gate current peak gate power dissipation at (or below) 85c case temperature (pulse width < 200 us) average gate power dissipation at (or below) 85c case temperature (see note 5) operating case temperature range storage temperature range lead temperature 1.6mm from case for 1 0 seconds symbol vdrm 'tirmsj !tsm 'tsm 'gm pgm pg(av) tc tstg tl value 400 600 700 800 4 25 30 0.2 1.3 0.3 -40to+110 -40to+125 230 unit v a a a a w w c c c notes: 1. these values apply bidirectionally for any value of resistance between the gate and main terminal 1. 2. this value applies for 50-hz full-sine-wave operation with resistive load. above 85c derate linearly to 110c case temperature at the rate of 160 matc. 3. this value applies for one 50-hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. surge may be repeated after the device has returned to original thermal equilibrium. during the surge, gate control may be lost. 4. this value applies for one 50-hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. surge may be repeated after the device has returned to original thermal equilibrium. during the surge, gate control may be lost. 5. this value applies for a maximum averaging time of 20 ms. electrical characteristics at 25c case temperature (unless otherwise noted) parameter repetitive peak drm off-state current peak gate trigger g? current peak gate trigger vg? voltage test conditions vd = rated vdrm ig = 0 tc = 110c v5uppiy = + 1 2 vt rl = 1 0 q tp(g) > 20 us vsupply = +12vt rl=10h tp(g)>20ns supply = -1 2 vt rl = 1 0 n tp(g) > 20 us vsupply = -12vt rl=10n tp(9)>20ms vsuppiy=+12vt rl=10n tp(9)>20ns vsuppiy = + 1 2 vt rl = 1 0 n tp(g) > 20 us vsupply = -1 2 vt rl = 1 0 q tp(g) > 20 us vsuppiy = -1 2 vt rl = 1 0 q tp(g) > 20 us win typ 0.5 -1.5 -2 3.6 0.7 -0.7 -0.8 0.8 max 1 5 -5 -5 10 2 -2 -2 2 unit ma ma v t all voltages are with respect to main terminal 1. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
tic206 series silicon triacs electrical characteristics at 25c case temperature (unless otherwise noted) (continued) parameter vtm peak on-state voltage ih holding current il latching current critical rate of rise of dv/dt off-state voltage critical rise of dv/dt, ., 1 ' commutation voltage test conditions itm = 4.2 a ig = 50 ma (see note 6) vsuppiy = +12vt ig = 0 lnit'ltm= 100ma vsuppiy = -12 vt ig = 0 inif itm = -100ma ^:+;22vv; ^n^, v supply '' vt vdrm = rated vdrm ig = 0 tc = 1 1 0'c , vdrm = rated vdrm itrm = 4.2 a tc = 85c win 1 typ 1.3 2 -4 50 1.3 max 2.2 15 -15 30 -30 2.5 unit v ma ma v/us v/ms t all voltages are with respect to main terminal 1. notes: 6. this parameter must be measured using pulse techniques, tp = < 1 ms, duty cycle < 2 %. voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. the triacs are triggered by a 15-v (open circuit amplitude) pulse supplied by a generator with the following characteristics: rg = 100 n, tp(g) = 20 us, tr = < 15 ns, f = 1 khz. thermal characteristics parameter rejc junction to case thermal resistance r,3ja junction to free air thermal resistance min typ max 7.8 62.5 unit c/w c/w typical characteristics 1000 < e o u 's o 100 10 0-1 gate trigger current vs temperature vsu = : ppiy 'gtm ?f - , ~"-? - ^, "?? ??-? -=?-. ?? . >^^ ?? , ^^ * ^, ?^^ ^"^"^ ~vaa l?(g ?o^^ ' - . -^ ^^ = 12 v ? = 10 11 -20 ' h- _ h5 - -60 -40 -20 0 20 40 60 80 100 120 tc - case temperature - c figure 1. gate trigger voltage vs temperature tc05ab -60 -40 -20 0 20 40 60 80 100 120 tc - case temperature - c figure 2.
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